Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1997-04-21
1999-08-03
Dang, Trung
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438217, 438548, 438549, 438558, 438564, 438223, 438227, 438231, 438232, H01L 2160
Patent
active
059337214
ABSTRACT:
A method of establishing a differential threshold voltage during the fabrication of first and second IGFETs having like conductivity type is disclosed. A dopant is introduced into the gate electrode of each transistor of the pair. The dopant is differentially diffused into respective channel regions to provide a differential dopant concentration therebetween, which results in a differential threshold voltage between the two transistors. One embodiment includes introducing a diffusion-retarding material, such as nitrogen, into the first gate electrode before the dopant is diffused into the respective channel regions, and without introducing a significant amount of the diffusion-retarding material into the second gate electrode. Advantageously, a single dopant implant can provide both threshold voltage values. The two threshold voltages may be chosen to provide various combinations of enhancement mode and depletion mode IGFETs.
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Gardner Mark I.
Hause Frederick N.
Kadosh Daniel
Advanced Micro Devices , Inc.
Dang Trung
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