Method for fabricating dielectric layer doped with nitrogen

Details Method for fabricating dielectric layer doped with nitrogen Method for fabricating dielectric layer doped with nitrogen

2007-09-04

2007-09-04

Wilczewski, M. (Department: 2822)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S775000

Reexamination Certificate

active

10908157

ABSTRACT:
A method for fabricating a dielectric layer doped with nitrogen is provided according to the present invention. According to the method, a dielectric layer is formed on a semiconductor substrate. Two steps of nitridation processes are then performed on the dielectric layer. Following that, one step or two steps of annealing processes are performed on the dielectric layer. Dielectric layer formed by the method has uniform nitrogen dopant, and thus has fine electric properties.

REFERENCES:
patent: 6362085 (2002-03-01), Yu
patent: 6649538 (2003-11-01), Cheng et al.
patent: 7138691 (2006-11-01), Burnham
patent: 7176094 (2007-02-01), Zhong
patent: 2003/0082863 (2003-05-01), Lim
patent: 2004/0188240 (2004-09-01), Chang
patent: 200304177 (2003-09-01), None
patent: 578270 (2004-03-01), None
patent: 1230980 (2005-04-01), None
patent: 200536055 (2005-11-01), None

Affiliated with

Also associated with

Rating

Method for fabricating dielectric layer doped with nitrogen does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating dielectric layer doped with nitrogen, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating dielectric layer doped with nitrogen will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3794396