Method for fabricating cylinder type capacitor

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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C438S396000

Reexamination Certificate

active

06949431

ABSTRACT:
Disclosed is a method for fabricating a cylinder type capacitor in a semiconductor device. Particularly, the cylinder type capacitor is fabricated through performing a series of processes. Among the serial processes, a cleaning process for removing a photosensitive layer remaining in undesired regions is performed before an etch-back process for forming bottom electrodes with use of the photosensitive layer as an etch mask. Especially, the cleaning process proceeds by employing one of a dry etching process and a wet etching process.

REFERENCES:
patent: 6383867 (2002-05-01), Kim et al.
patent: 6878601 (2005-04-01), Kim

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