Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-09-27
2005-09-27
Nelms, David (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S396000
Reexamination Certificate
active
06949431
ABSTRACT:
Disclosed is a method for fabricating a cylinder type capacitor in a semiconductor device. Particularly, the cylinder type capacitor is fabricated through performing a series of processes. Among the serial processes, a cleaning process for removing a photosensitive layer remaining in undesired regions is performed before an etch-back process for forming bottom electrodes with use of the photosensitive layer as an etch mask. Especially, the cleaning process proceeds by employing one of a dry etching process and a wet etching process.
REFERENCES:
patent: 6383867 (2002-05-01), Kim et al.
patent: 6878601 (2005-04-01), Kim
Hoang Quoc
Hynix / Semiconductor Inc.
McDermott Will & Emery LLP
Nelms David
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