Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-06-26
2007-06-26
Dang, Phuc T. (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S211000
Reexamination Certificate
active
11164950
ABSTRACT:
A method for fabricating a conductive line is provided. First, a substrate having at least two isolation structures already formed is provided. A first conductive layer is formed between every two isolation structures. Then, a dielectric layer is formed on the substrate. The dielectric layer is patterned to form an opening exposing the first conductive layer. After that, a second conductive layer is formed on the substrate. A portion of the second conductive layer outside the opening is removed to form a conductive line. As the size of the device is getting smaller, the size and the position accuracy of the conductive line would not be limited to the design rules of lithography if the present invention is applied. Therefore, a conductive line is formed to electrically connect semiconductor devices effectively.
REFERENCES:
patent: 6420220 (2002-07-01), Gardner et al.
patent: 6893918 (2005-05-01), Wang et al.
Lai Liang-Chuan
Wang Pin-Yao
Yang Jeng-Huan
Dang Phuc T.
Jiang Chyun IP Office
Powerchip Semiconductor Corp.
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