Method for fabricating complementary metal oxide...

Details Method for fabricating complementary metal oxide... Method for fabricating complementary metal oxide...

2005-12-13

2005-12-13

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S525000, C257S219000

Reexamination Certificate

active

06974742

ABSTRACT:
The present invention relates to a method for fabricating a complementary metal oxide semiconductor (CMOS) image sensor, wherein a mini-p-well is stably formed in a pixel region being correspondent to a trend of large scale of integration. The method includes the steps of: preparing a substrate defined with a peripheral region and a pixel region; performing a first ion-implantation process by using a first photoresist having a first thickness to thereby form a normal first conductive well in the pixel region; and performing a second ion-implantation process by using a second photoresist having a second thickness to thereby form a mini-well of the first conductive type in the peripheral region, wherein the first thickness is greater than the second thickness.

REFERENCES:
patent: 6504194 (2003-01-01), Miida

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