Method for fabricating CMOS image sensor with plasma...

Details Method for fabricating CMOS image sensor with plasma... Method for fabricating CMOS image sensor with plasma...

2007-03-28

2009-12-08

Vu, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S292000

Reexamination Certificate

active

07629216

ABSTRACT:
A method for fabricating a complementary metal-oxide semiconductor (CMOS) image sensor includes providing a semi-finished substrate, forming a patterned blocking layer over a photodiode region of the substrate, implanting impurities on regions other than the photodiode region using a mask while the patterned blocking layer remains, and removing the mask.

REFERENCES:
patent: 6974715 (2005-12-01), Lee
patent: 7381584 (2008-06-01), Lim
patent: 2005/0059177 (2005-03-01), Rhodes
patent: 2007/0007611 (2007-01-01), Park et al.
patent: 2007/0020796 (2007-01-01), Park
patent: 2005-72236 (2005-03-01), None
patent: 20020017747 (2002-03-01), None
patent: 20040058708 (2004-07-01), None
patent: 20040058733 (2004-07-01), None
patent: 20060077115 (2006-07-01), None

Affiliated with

Also associated with

Rating

Method for fabricating CMOS image sensor with plasma... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating CMOS image sensor with plasma..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating CMOS image sensor with plasma... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4145792