Method for fabricating CMOS image sensor

Details Method for fabricating CMOS image sensor Method for fabricating CMOS image sensor

2006-12-19

2009-10-06

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S532000, C257SE21352

Reexamination Certificate

active

07598135

ABSTRACT:
Provided is a method for fabricating CMOS image sensor. One method includes: preparing a semiconductor substrate in which a photodiode region and a transistor region are defined; sequentially forming an insulating layer and a conductive layer on an entire surface of the semiconductor substrate; forming a photoresist pattern for a gate electrode on the conductive layer; etching the conductive layer to a predetermined thickness using the photoresist pattern as a mask; performing an ion implantation process on the etched conductive layer to form a doped conductive layer; performing an oxidation process on the resultant structure including the doped conductive layer for oxidizing the doped conductive layer so as to form an oxide layer; and removing the oxide layer and the insulating layer disposed thereunder to define a gate electrode and a gate insulating layer.

REFERENCES:
patent: 6303421 (2001-10-01), Chang
patent: 7126102 (2006-10-01), Inoue et al.
patent: 2005/0093036 (2005-05-01), Han

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