Method for fabricating CMOS image sensor

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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Details

C438S202000, C257SE27133, C257S233000, C257S291000, C257S292000

Reexamination Certificate

active

11172150

ABSTRACT:
A method for fabricating a CMOS image sensor is disclosed, to decrease a dark current, which includes the steps of forming a photodiode area in a semiconductor substrate; forming a plurality of gates including a first gate on the semiconductor substrate, wherein the first gate has one side aligned to the edge of the photodiode area; sequentially forming a first insulating layer and a second insulating layer on an entire surface of the semiconductor substrate; forming a first photoresist, wherein the firs photoresist is patterned so as to expose the upper side of the first gate and the other side of the gate being opposite to one side of the gate; forming a spacer at the other side of the first gate by dry-etching the second insulating layer in state of using the first photoresist as a mask, and forming a silicide blocking layer above the photodiode area; and removing the first photoresist.

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Yeong Hun Park et al.; Image sensor and fabricating method thereof; Korean Patent Abstracts; Dec. 31, 2003; Publication No. 1020030097648A; Korean Intellectual Property Office, Republic of Korea, no translate.

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