Method for fabricating CMOS image sensor

Details Method for fabricating CMOS image sensor Method for fabricating CMOS image sensor

2008-01-29

2008-01-29

Geyer, Scott B. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21263

Reexamination Certificate

active

07323378

ABSTRACT:
This invention provides a CMOS image sensor having a pinned photodiode. A P substrate is provided having thereon a P well. The P well is adjacent to a light-sensing region of the CMOS image sensor. A gate electrode of a transfer transistor of the CMOS image sensor is formed on the P well. A self-aligned implantation is performed to form N-type diode diffusion within the light-sensing region. An oblique ion implantation process is then performed to form N-type pocket diffusion directly under the gate electrode. Spacers are formed on sidewalls of the gate electrode. A surface P+ pinning diffusion region is then formed in the diode diffusion region.

REFERENCES:
patent: 2006/0001059 (2006-01-01), Mouli et al.
patent: 2006/0124976 (2006-06-01), Adkisson et al.

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