Method for fabricating CMOS analog semiconductor

Details Method for fabricating CMOS analog semiconductor Method for fabricating CMOS analog semiconductor

1996-12-05

1998-02-03

Niebling, John

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438210, 438297, H01L 218238

Patent

active

057144109

ABSTRACT:
An improved CMOS analog semiconductor apparatus and a fabrication method thereof which are capable of selectively oxidizing a polysilicon, and forming a conductive region and an insulation region of a semiconductor apparatus, for thus improving a metal step coverage of the semiconductor apparatus by using a simpler process, so that it is possible to reduce a defective wiring and crack, and to increase a yield and reliability of the product. The apparatus includes a capacitor including a lower electrode formed on the field insulation layer of the semiconductor substrate, a first insulation layer formed on the field insulation layer including the lower electrode so as to expose a contact region for connecting with the first insulation layer, an upper electrode connection layer formed on an upper surface except for the contact region of the first insulation layer, a resistance device formed on the upper electrode connection layer, a lower electrode connection layer for forming a contact portion with the lower electrode, a second insulation layer formed in a region of the silicide layers of the first insulation layer and the lower electrode for insulating the upper and lower electrode connection layers, and a metallic layer for forming a contact portion with the upper and lower electrode layers.

REFERENCES:
patent: 5393691 (1995-02-01), Hsu et al.
patent: 5395782 (1995-03-01), Ohkoda et al.
patent: 5506158 (1996-04-01), Eklund
patent: 5536673 (1996-07-01), Hong et al.

Affiliated with

Also associated with

Rating

Method for fabricating CMOS analog semiconductor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating CMOS analog semiconductor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating CMOS analog semiconductor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-661986