Method for fabricating cell transistor of flash memory

Details Method for fabricating cell transistor of flash memory Method for fabricating cell transistor of flash memory

2007-10-09

2007-10-09

Le, Thao P. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S221000, C438S296000, C438S359000

Reexamination Certificate

active

11179452

ABSTRACT:
A method for fabricating a cell transistor of a flash memory including a device isolation film is disclosed, to prevent the mouse bite and the residue of a gate electrode, which includes the steps of forming a moat pattern of STI structure on a semiconductor substrate; forming a shallow trench by etching the semiconductor substrate exposed by the moat pattern; forming a gap-fill insulating layer in the shallow trench by HDP; forming the device isolation film of STI structure in the shallow trench by etching the gap-fill insulating layer with CMP; forming a flash cell pattern for opening an area for flash memory cell transistor in the semiconductor substrate; and removing the flash cell pattern and the moat pattern after etching the upper surface of the device isolation film in the area being opened by the flash cell pattern.

REFERENCES:
patent: 6413809 (2002-07-01), Nakamura et al.
patent: 2003/0045105 (2003-03-01), Feldner et al.
patent: 2004/0092116 (2004-05-01), Hsieh
patent: 2005/0032322 (2005-02-01), Kim et al.
patent: 2006/0202301 (2006-09-01), Ohta et al.

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