Method for fabricating capacitors of semiconductor devices

Details Method for fabricating capacitors of semiconductor devices Method for fabricating capacitors of semiconductor devices

1997-06-26

1999-01-19

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438635, 438768, H01L 218242

Patent

active

058613323

ABSTRACT:
A method for fabricating a capacitor of a semiconductor device, which is capable improving the chemical and thermal stability of lower electrodes. The method includes forming an interlayer insulating film provided with a contact hole over a semiconductor substrate, forming a conductive polysilicon plug in the contact hole, sequentially forming a titanium film and a titanium nitride film over the entire exposed surface of the resulting structure, selectively removing the titanium film and titanium nitride film by use of a first storage electrode mask, thereby forming a titanium film pattern and a titanium nitride film pattern, sequentially forming a ruthenium film and a ruthenium dioxide film over the entire exposed surface of the resulting structure, selectively removing the ruthenium film and the ruthenium dioxide film by use of a second storage electrode mask, thereby forming a ruthenium film pattern and a ruthenium dioxide film pattern, forming an SrO film over the entire exposed surface of the resulting structure, forming a high dielectric film over the SrO film, and forming an upper electrode over the high dielectric film.

REFERENCES:
patent: 5489548 (1996-02-01), Nishioka et al.
patent: 5554564 (1996-09-01), Nishioka et al.
patent: 5567964 (1996-10-01), Kashihara et al.
patent: 5585300 (1996-12-01), Summerfelt
patent: 5702970 (1997-12-01), Choi
patent: 5728616 (1998-03-01), Sakao

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