Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1998-05-27
1999-01-19
Niebling, John F.
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438239, 438240, 438243, 438244, 438255, 438256, H01L 218242
Patent
active
058613315
ABSTRACT:
A method for fabricating capacitors of a DRAM by employing liquid-phase deposition. Since the working temperature required for performing liquid-phase deposition is low, the deposition process can be performed in the presence of the photoresist. This method comprises: filling the contact hole and covering the isolation layer with conductive layer; performing an etching process on the conductive layer by using photoresist and low-temperature spacer as mask; again performing an etching process on the conductive layer, to a desired depth by controlling the etching time and using the low-temperature spacer as mask; removing the low-temperature spacer for finally forming the lower electrode of a cylindrical capacitor.
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Wolf et al., Silicon Processing for the VLSI Era, vol. 1, p. 518, 1986 Month Unknown.
Murphy John
Niebling John F.
United Microelectronics Corp.
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