Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1998-05-08
1999-03-30
Chang, Joni
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438397, H01L 218242
Patent
active
058888667
ABSTRACT:
A method for fabricating capacitors of a DRAM by employing the liquid-phase deposition. Since the working temperature required for performing liquid-phase deposition is low, selective deposition can be performed on the area not covered by photoresist with the presence of the photoresist layer. The foregoing method comprises: filling up the contact hole with photoresist, and keeping up coating photoresist upward and horizontally; selectively depositing oxide on the area, that is not coated with photoresist, by utilizing the liquid-phase deposition process; removing the photoresist for forming an opening which forms the profile of the lower electrode of a capacitor; forming a conductive layer on the inner walls of the opening, and having the contact hole filled as well to form the lower electrode.
REFERENCES:
patent: 5807775 (1998-09-01), Tseng
patent: 5807777 (1998-09-01), Wu
patent: 5817554 (1998-10-01), Tseng
Chang Joni
United Microelectronics Corp.
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