Method for fabricating capacitor of semiconductor device using h

Details Method for fabricating capacitor of semiconductor device using h Method for fabricating capacitor of semiconductor device using h

1997-05-02

1998-10-06

Tsai, Jey

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438255, H01L 218242

Patent

active

058175555

ABSTRACT:
A method for fabricating a capacitor of a semiconductor device, including the steps of: sequentially forming first and second insulating layers on a substrate; selectively etching the second insulating layer to form a first contact; forming a third insulating layer on the second insulating layer including the first contact; etching the third insulating layer placed on a capacitor region including the first contact, to expose the first contact, the first contact including the second insulating layer on the capacitor region; etching the first insulating layer placed in the first contact; forming a first conductive layer on the capacitor region and third insulating layer; forming a temporary layer on the first conductive layer placed on the capacitor region; etching the first conductive layer placed on the third insulating layer using the temporary layer as a mask; removing the temporary layer, and forming a dielectric layer on the surface of the first conductive layer; and forming a second conductive layer on the dielectric layer.

REFERENCES:
patent: 5047817 (1991-09-01), Wakamiya et al.
patent: 5140389 (1992-08-01), Kimura et al.
patent: 5284787 (1994-02-01), Ahn
patent: 5597755 (1997-01-01), Ajika et al.
patent: 5605857 (1997-02-01), Jost et al.

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