Method for fabricating capacitor of semiconductor device

Details Method for fabricating capacitor of semiconductor device Method for fabricating capacitor of semiconductor device

1996-12-23

1998-05-19

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438386, 438424, H01L 218242

Patent

active

057535493

ABSTRACT:
A method for fabricating a capacitor of a semiconductor device which is capable of reducing data errors caused due to the interaction between neighboring capacitors, which includes the steps of forming a first trench in a semiconductor substrate, filling the first trench with an insulation film, etching the semiconductor substrate at both sides of the first trench for forming second and third trenches, forming a first electrode at both sides of the second and third trenches, respectively, forming a dielectric film on the first electrode and the second and third trenches, and forming a second electrode on the dielectric film.

REFERENCES:
patent: 4577395 (1986-03-01), Shibata
patent: 5106774 (1992-04-01), Hieda et al.
patent: 5272102 (1993-12-01), Hur et al.
patent: 5346845 (1994-09-01), Jun
patent: 5466628 (1995-11-01), Lee et al.

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