Method for fabricating capacitor of semiconductor device

Details Method for fabricating capacitor of semiconductor device Method for fabricating capacitor of semiconductor device

1996-05-21

1998-12-15

Tsai, Jey

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438397, H01L 218242

Patent

active

058496181

ABSTRACT:
A method for fabricating a capacitor for a semiconductor device includes the steps of depositing an insulating layer on a substrate, selectively removing the insulating layer and forming a contact hole, forming a first electrode in the contact hole, removing the insulating layer to expose a portion of the first electrode, and sequentially forming a dielectric layer and a second electrode on the exposed portion of the first electrode.

REFERENCES:
patent: 5534458 (1996-07-01), Okudaira et al.

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