Method for fabricating capacitor of semiconductor device

Details Method for fabricating capacitor of semiconductor device Method for fabricating capacitor of semiconductor device

1997-10-30

1999-06-29

Tsai, Jey

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438287, 438672, H01L 218242

Patent

active

059181230

ABSTRACT:
A method for fabricating a capacitor of a semiconductor device in which its process is simplified and capacitance is efficiently improved is disclosed, including the steps of preparing a semiconductor substrate equipped with a transistor; forming a plug electrically connected to an impurity region of the transistor; forming a Si--H boding layer on surface of the plug; detaching H ions from the Si--H bonding layer so as to form a SiO.sub.x layer; and forming an electrode over the plug.

REFERENCES:
patent: 5330614 (1994-07-01), Ahn
patent: 5714415 (1998-02-01), Oguro
T. Eimori et al., "A Newly Designed Planar Stacked Capacitor Cell with High dielectric Constant Film for 256Mbit DRAM", IEDM Technical Digest, 1993 IEEE, pp. 631-634.
Kuniaki Koyama et al., "A Stacked Capacitor with (Ba.sub.x Sr.sub.1--x)TiO.sub.3 For 256M DRAM", IEDM Technical Digest, 1991 IEEE, pp. 823-826.

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