Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-12-07
2010-02-23
Chen, Jack (Department: 2893)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S398000, C257SE21001
Reexamination Certificate
active
07666738
ABSTRACT:
The present invention relates to a method for fabricating a capacitor of a semiconductor device. The method includes the steps of: forming a first amorphous silicon layer doped with an impurity in a predetermined first doping concentration suppressing dopants from locally agglomerating; forming an impurity undoped second amorphous silicon layer on the first amorphous silicon layer in an in-situ condition; forming a storage node by patterning the first amorphous silicon layer and the second amorphous silicon layer; forming silicon grains on a surface of the storage node; and doping the impurity to the storage node and the silicon grains until reaching a second predetermined concentration for providing conductivity required by the storage node.
REFERENCES:
patent: 6180451 (2001-01-01), Hsieh et al.
patent: 6218260 (2001-04-01), Lee et al.
patent: 6235613 (2001-05-01), Nuttall
patent: 6255159 (2001-07-01), Thakur
patent: 2001/0030336 (2001-10-01), Yamamoto
patent: 1384539 (2002-12-01), None
patent: 2001-0008411 (2001-02-01), None
patent: 2001-0091874 (2001-10-01), None
Choi Hyung-Bok
Kim Jin-Woong
Lee Jong-Min
Shin Dong-Woo
Chen Jack
Hynix / Semiconductor Inc.
Townsend and Townsend / and Crew LLP
LandOfFree
Method for fabricating capacitor of semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for fabricating capacitor of semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating capacitor of semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4159836