Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-11-08
2008-08-12
Nguyen, Thanh (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S396000, C438S756000, C257SE21648
Reexamination Certificate
active
07410865
ABSTRACT:
Disclosed herein is a method for fabricating a capacitor of a semiconductor device. The method comprises the steps of forming an interlayer insulating film on a semiconductor substrate, forming contact plugs connected to the semiconductor substrate though the interlayer insulating film, forming a first storage node oxide film include a PSG film on the contact plugs, cleaning the semiconductor substrate on which the first storage node oxide film include a PSG film is formed, using isopropyl alcohol (IPA), to remove water-soluble compounds, and forming a second storage node oxide film on the first storage node oxide film.
REFERENCES:
patent: 5513601 (1996-05-01), Benson
patent: 6232239 (2001-05-01), Lim
patent: 6716756 (2004-04-01), Kang
patent: 2003/0190808 (2003-10-01), Kim et al.
patent: 2004/0033698 (2004-02-01), Lee et al.
patent: 2005/0191856 (2005-09-01), Torek et al.
patent: 2005/0202645 (2005-09-01), Kim et al.
patent: 04-232443 (1992-08-01), None
patent: 100252223 (2000-01-01), None
patent: 1020040059849 (2004-07-01), None
Hynix / Semiconductor Inc.
Marshall & Gerstein & Borun LLP
Nguyen Thanh
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