Method for fabricating capacitor of semiconductor device

Details Method for fabricating capacitor of semiconductor device Method for fabricating capacitor of semiconductor device

2006-10-31

2006-10-31

Picardat, Kevin M. (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S239000, C438S243000, C438S386000, C438S387000

Reexamination Certificate

active

07129131

ABSTRACT:
A method for fabricating a capacitor of a semiconductor device. The semiconductor device includes: a bit line structure formed on a substrate and including stacked layers of a bit line, a hard mask and a spacer. The spacer is formed along a profile containing the bit line and the hard mask. A first inter-layer insulation layer is deposited on an entire surface of the bit line structure. A storage node contact plug is formed on the substrate by passing through the inter-layer insulation layer and having a partially etched portion. A second inter-layer insulation layer is formed on a partial portion of the first inter-layer insulation layer and the storage node contact plug. A lower electrode having a circular shape is formed on lateral sides of the second inter-layer insulation layer, an exposed portion of the first inter-layer insulation layer and the partially etched portion of the storage node contact plug, wherein the lower electrode electrically contacts at least a predetermined lateral side of the partially etched portion.

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