Method for fabricating capacitor of semiconductor device

Details Method for fabricating capacitor of semiconductor device Method for fabricating capacitor of semiconductor device

2005-09-27

2005-09-27

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S653000

Reexamination Certificate

active

06949428

ABSTRACT:
In fabricating a capacitor of a semiconductor device, a first contact plug is formed in a plug contact hole formed by patterning a portion of a first interlayer insulating film formed on a substrate. A first barrier layer, a first polysilicon layer, and a second barrier layer are formed. A first contact hole is formed after sequentially patterning the second barrier layer, the first polysilicon layer, and the first barrier layer. A first dielectric layer is formed to have portions located at outside and bottom parts of the first contact hole. A second polysilicon layer is formed to have its portions located at portions except for the first contact hole. A second dielectric layer and a third polysilicon layer are formed. A second interlayer insulating film is formed after patterning the third polysilicon layer. The second interlayer insulating film, the patterned third polysilicon layer, the second dielectric layer, the second barrier layer, and the first polysilicon layer are selectively removed to form a second contact hole and a second contact plug, and then forming a metal wiring.

REFERENCES:
patent: 6284595 (2001-09-01), Kato
patent: 6380574 (2002-04-01), Torii et al.
patent: 6607954 (2003-08-01), Jeon et al.
patent: 6727542 (2004-04-01), Kim et al.

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