Method for fabricating capacitor in semiconductor memory device

Details Method for fabricating capacitor in semiconductor memory device Method for fabricating capacitor in semiconductor memory device

2006-05-02

2006-05-02

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

Reexamination Certificate

active

07037778

ABSTRACT:
Disclosed is a method for fabricating a capacitor in a semiconductor memory device. The method includes the steps of: sequentially forming a first insulation layer and a first etch stop layer on a substrate; forming a plurality of contact holes by etching the first insulation layer and the first etch stop layer; forming a plurality of contact plugs on the plurality of contact holes such that the contact plugs are more projected than the first etch stop layer; sequentially forming a second etch stop layer and a capacitor insulation layer; forming a plurality of openings by etching the second etch stop layer and the capacitor insulation layer to expose the contact plugs; sequentially forming a storage node material and a sacrificial layer; etching the storage node material and the sacrificial layer, thereby obtaining isolated storage node material; and removing remaining portions of the sacrificial layer and the capacitor insulation layer.

REFERENCES:
patent: 6667209 (2003-12-01), Won et al.
patent: 6716679 (2004-04-01), Bae
patent: 6800522 (2004-10-01), Lee

Affiliated with

Also associated with

Rating

Method for fabricating capacitor in semiconductor memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating capacitor in semiconductor memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating capacitor in semiconductor memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3576838