Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2008-06-27
2010-10-19
Smith, Zandra (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S243000, C438S244000, C438S386000, C438S387000, C438S396000, C438S397000, C438S650000, C438S661000, C438S686000
Reexamination Certificate
active
07816202
ABSTRACT:
A method for fabricating a capacitor includes providing a substrate having a capacitor region is employed, forming a first Ru1−xOxlayer over the substrate, forming a Ru layer for a lower electrode over the first Ru1−xOxlayer and deoxidizing the first Ru1−xOxlayer, forming a dielectric layer over the Ru layer for a lower electrode, and forming a conductive layer for an upper electrode over the dielectric layer, wherein the first Ru1−xOxlayer contains oxygen in an amount less than an oxygen amount of a RuO2layer.
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Do Kwan-Woo
Kil Deok-Sin
Kim Jin-Hyock
Kim Young-Dae
Lee Kee-Jeung
Duong Khanh B.
Hynix / Semiconductor Inc.
Smith Zandra
Townsend and Townsend / and Crew LLP
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