Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-09-12
2009-06-16
Pizarro, Marcos D. (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S243000, C257SE21008
Reexamination Certificate
active
07547598
ABSTRACT:
A method for fabricating a capacitor in a semiconductor device includes forming a first insulation layer over a substrate, forming storage node contact plugs in the first insulation layer, contacting predetermined portions of the substrate, forming a second insulation layer over the first insulation layer and the storage node contact plugs, forming trenches exposing the storage node contact plugs, forming storage nodes in the trenches, forming a plasma barrier layer over the second insulation layer and the storage nodes, forming a capping layer over the plasma barrier layer and filled in the trenches, removing the capping layer, the plasma barrier layer, and the second insulation layer, forming a dielectric layer over the storage nodes, and forming a plate electrode over the dielectric layer.
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Notice of Preliminary Rejection from the Korean Intellectual Property Office, mailed Jun. 18, 2007 in Korean Patent Application No. 2006-0068467 and English translation thereof.
English language translation of the first Office Action issued from the State Intellectual Property Office of the People's Republic of China on Jul. 11, 2008, in counterpart Chinese Application No. 2006101541151.
Anya Igwe U.
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Hynix / Semiconductor Inc.
Pizarro Marcos D.
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