Method for fabricating capacitor in semiconductor device

Details Method for fabricating capacitor in semiconductor device Method for fabricating capacitor in semiconductor device

2005-07-05

2005-07-05

Tsai, H. Jey (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S253000, C438S287000, C438S791000

Reexamination Certificate

active

06913963

ABSTRACT:
A method for fabricating a capacitor for a semiconductor device is disclosed, which comprises the steps of: forming a storage node electrode on a semiconductor wafer, forming a dielectric layer made of a cyclic silicon nitride layer on the surface of the storage node electrode, and forming an upper electrode on the dielectric layer; lowering the thickness Teffof the dielectric layer and improving leakage current characteristics through use of a cyclic Si3N4or a cyclic SiOxNy(wherein x falls between 0.1 and 0.9 and y falls between 0.1 and 2), having a large oxidation resistance and high dielectric ratio, as a dielectric.

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