Method for fabricating capacitor

Details Method for fabricating capacitor Method for fabricating capacitor

2005-11-01

2005-11-01

Wilczewski, M. (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S396000

Reexamination Certificate

active

06960504

ABSTRACT:
The present invention is related to a method for fabricating a capacitor capable of preventing a contact between neighboring lower electrodes even if a height of the lower electrode increases. The lower electrode is formed to have a critical dimension wider at a bottom region than at a top region to thereby be firmly supported. Also, a wider distance between the lower electrodes prevents neighboring lower electrodes from contacting to each other. As a result of these effects, it is possible to prevent a failure of dual bit, which eventually results in higher yields of semiconductor devices.

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