Method for fabricating capacitive element of semiconductor memor

Details Method for fabricating capacitive element of semiconductor memor Method for fabricating capacitive element of semiconductor memor

1996-04-24

1997-09-02

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438398, 438964, H01L 218242

Patent

active

056630859

ABSTRACT:
After formation of a node-contact hole through an interlayer insulation film, an LPCVD using a monosilane gas is employed to form a non-doped polycrystalline silicon film on the interlayer insulation film, filling the node-contact hole. The non-doped polycrystalline silicon film is converted into an n-type polycrystalline silicon film. Using a disilane gas and a phosphine gas as raw gases, an n-type doped amorphous silicon film is formed. After patterning, a heat treatment is employed under a super-high vacuum pressure to convert the n-type doped amorphous silicon film into an n-type polycrystalline silicon film with a rugged surface. A capacitive element is fabricated with a reduced dispersion of capacitance in a simplified manner suitable for a miniaturization of cell size.

REFERENCES:
patent: 5486488 (1996-01-01), Kamiyama

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