Method for fabricating borderless and self-aligned polysilicon a

Details Method for fabricating borderless and self-aligned polysilicon a Method for fabricating borderless and self-aligned polysilicon a

1999-02-11

2000-12-12

Nelms, David

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438618, H01L 214763

Patent

active

061598399

ABSTRACT:
A method for making a novel structure having borderless and self-aligned polysilicon and metal contact landing plugs for multilevel interconnections on integrated circuits is achieved. An etch-stop layer and a planar insulating layer are formed over the devices on a substrate. Contact openings are etched in the insulating layer to the etch-stop layer and the etch-stop layer is removed over the N.sup.- contact areas. An N.sup.+ doped polysilicon layer is deposited, and second contact openings are etched in the polysilicon and insulating layers over N.sup.+ and P.sup.+ contacts on the substrate to the etch-stop layer. The etch-stop layer is selectively removed and a conducting barrier layer and a metal layer are deposited having a second etch-stop layer on the surface. The layers are patterned to form interconnecting lines and concurrently to form polysilicon landing plugs to the N.sup.- contacts, while forming metal landing plugs to the N.sup.+ and P.sup.+ contacts. Via holes can now be etched in a second insulating layer over and to the landing plugs. The polysilicon landing plugs to the N.sup.- contacts reduce current leakage, while the metal contacts to the N.sup.+ and P.sup.+ contacts reduce the contact resistance (Rc). The landing plugs protect the substrate contacts from damage during via hole etch and reduce the aspect ratio for making more reliable contacts.

REFERENCES:
patent: 4966870 (1990-10-01), Barber et al.
patent: 5654589 (1997-08-01), Huang et al.
patent: 5665623 (1997-09-01), Liang et al.
patent: 5674781 (1997-10-01), Huang et al.
patent: 6093629 (2000-07-01), Chen

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