Method for fabricating asymmetric semiconductor device

Details Method for fabricating asymmetric semiconductor device Method for fabricating asymmetric semiconductor device

2007-10-09

2007-10-09

Smith, Zandra V. (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S305000, C438S308000, C438S530000

Reexamination Certificate

active

11067287

ABSTRACT:
A method for fabricating an asymmetric semiconductor device is provided. A substrate formed with at least one base structure of MOSFET thereon is provided, wherein the base structure includes a gate over the substrate and a source extension and a drain extension in the substrate beside the gate. The base structure is then treated with an anisotropic annealing source inclined in the source-to-drain direction of the base structure relative to the normal of the substrate, such that one of the source and drain extensions is shadowed by the gate and the other is annealed more.

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