Method for fabricating an one-time programmable read only memory

Details Method for fabricating an one-time programmable read only memory Method for fabricating an one-time programmable read only memory

1998-06-09

2000-03-28

Booth, Richard

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438262, A01L 218247

Patent

active

060431210

ABSTRACT:
A method for fabricating an OTP-ROM includes a first polysilicon layer formed over a semiconductor substrate. An ion implanting process is performed to form a diffusion region inside the substrate on both sides of the first polysilicon layer. This diffusion region acts as a bit line. Then, a second polysilicon layer is formed to cover the first polysilicon layer. The second polysilicon layer is patterned to form a control gate. The patterning process is continued to further pattern the first polysilicon layer to form a floating gate.

REFERENCES:
patent: 5532181 (1996-07-01), Takebuchi et al.
patent: 5646888 (1997-07-01), Mori
patent: 5666311 (1997-09-01), Mori
patent: 5930628 (1999-07-01), Chang
patent: 5946230 (1999-08-01), Shimizu et al.

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