Method for fabricating an NMOS transistor

Details Method for fabricating an NMOS transistor Method for fabricating an NMOS transistor

2006-11-21

2009-06-23

Lindsay, Jr., Walter L (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S478000, C438S514000, C438S758000, C257SE21055, C257SE21057, C257SE21634

Reexamination Certificate

active

07550336

ABSTRACT:
A method for fabricating an NMOS transistor is disclosed. First, a substrate having a gate structure thereon is provided. A carbon implantation process is performed thereafter by implanting carbon atoms into the substrate for forming a silicon carbide region in the substrate. Subsequently, a source/drain region is formed surrounding the gate structure. By conducting a carbon implantation process into the substrate and a corresponding amorphorized implantation process before or after the carbon implantation process is completed, the present invention eliminates the need of forming a recess for accommodating an epitaxial layer composed of silicon carbide while facilitates the formation of silicon carbide from the combination of both implantation processes.

REFERENCES:
patent: 6551886 (2003-04-01), Yu
patent: 6621131 (2003-09-01), Murthy et al.
patent: 6861318 (2005-03-01), Murthy et al.
patent: 6881635 (2005-04-01), Chidambarrao et al.
patent: 7217608 (2007-05-01), Xiang
patent: 2004/0262694 (2004-12-01), Chidambaram
patent: 2005/0112835 (2005-05-01), Sa
patent: 2006/0105511 (2006-05-01), Yang et al.
patent: 2006/0115940 (2006-06-01), Kim et al.
patent: 2006/0134872 (2006-06-01), Hattendorf et al.
patent: 2006/0234455 (2006-10-01), Chen et al.
patent: 2007/0037326 (2007-02-01), Chen et al.
patent: 2007/0238262 (2007-10-01), Summers

Affiliated with

Also associated with

Rating

Method for fabricating an NMOS transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating an NMOS transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating an NMOS transistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4076937