Method for fabricating an interlayer-dielectric film of a semico

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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156662, 437982, H01L 2100, H01L 2102, B44C 122, C03C 1500

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054054893

ABSTRACT:
The surface of a borophosphosilicate glass (BPSG) dielectric film is changed through a surface treatment, such as by plasma etching with N.sub.2 O, O.sub.3 or O.sub.2. Erosion caused by H.sub.2 SO.sub.4 boiling or by humidity absorption from the atmosphere is thereby reduced so that reflow processing at temperatures below 850.degree. C. is possible and an interlayer dielectric film of excellent planarity is thus formed.

REFERENCES:
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patent: 4799992 (1989-01-01), Rao et al.
patent: 4872947 (1989-10-01), Wang et al.
Yasuo Ikeda, Youichirou Numasawa and Mitsuru Sakamoto; "Ozone/Organic-Source APCVD for ULSI Reflow Glass Films"; Development Division; NEC Res. & Dev. No. 84; Jul. 1969.
D. S. Williams E. A. Dein; "LPCVD of Borophosphosilicate Glass from Organic Reactants"; J. Electrochemical Soc. Solid-State Science and Technology; Mar. 1987; pp. 57-63.
Peter Lee, Maria Galiano, Peter Keswick, Jerry Wong, Bok Shin, David Wang; "Sub-Atmospheric Chemical Vapor Deposition (SACVD) of Teos-Ozone USG and BPSG"; TH-0325-1/90/0000-0398 C 1990 IEEE.

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