Method for fabricating an integrated pin diode and...

Details Method for fabricating an integrated pin diode and... Method for fabricating an integrated pin diode and...

2007-11-20

2007-11-20

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S463000, C257SE21644

Reexamination Certificate

active

10526818

ABSTRACT:
A method for producing an integrated PIN photodiode. The PIN photodiode contains a doped region of a first conduction type near the substrate and a doped region that is remote from the substrate. The doped region that is remote from the substrate has a different construction type than the region near the substrate. In addition, an intermediate region provided that is a range between the doped region remote from the substrate and the doped region near the substrate. The intermediate region is undoped or provided with weak doping.

REFERENCES:
patent: 4831430 (1989-05-01), Umeji
patent: 5355013 (1994-10-01), Parker
patent: 5418396 (1995-05-01), Mita
patent: 5550701 (1996-08-01), Nadd et al.
patent: 6380603 (2002-04-01), Takimoto et al.
patent: 2238664 (1990-09-01), None

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