Method for fabricating an integrated circuit structure

Details Method for fabricating an integrated circuit structure Method for fabricating an integrated circuit structure

1998-01-28

2000-08-01

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438785, H01L 218242

Patent

active

060965975

ABSTRACT:
In one embodiment, the present invention provides a method of treating a dielectric layer 24. First, the dielectric layer is heated while being subjected to an O.sub.2 plasma. After that, the dielectric layer is heated while being subject to an ozone environment. This method can be useful in forming a capacitor 12 dielectric 24. In turn, the capacitor could be used in a DRAM memory device.

REFERENCES:
patent: 4201798 (1980-05-01), Lindmayer
patent: 5468687 (1995-11-01), Carl
patent: 5486488 (1996-01-01), Kamiyama
patent: 5508221 (1996-04-01), Kamiyama
patent: 5610097 (1995-11-01), Shimizu
patent: 5837593 (1998-11-01), Park
patent: 5859760 (1999-01-01), Park
patent: 5913117 (1999-06-01), Lee

Affiliated with

Also associated with

Rating

Method for fabricating an integrated circuit structure does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating an integrated circuit structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating an integrated circuit structure will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-663060