Static information storage and retrieval – Systems using particular element – Amorphous
Reexamination Certificate
2011-08-30
2011-08-30
Nguyen, Dang T (Department: 2824)
Static information storage and retrieval
Systems using particular element
Amorphous
C365S148000, C365S151000
Reexamination Certificate
active
08009468
ABSTRACT:
A method for fabricating an integrated circuit, the method comprises forming a first electrode, depositing resistance changing material over the first electrode, the resistance changing material having an active zone for switching the resistance of the resistance changing material and an inactive zone, and forming a second electrode over the resistance changing material. The chemical composition of the resistance changing material in the active zone differs from the chemical composition of the resistance changing material in the inactive zone.
REFERENCES:
patent: 6806526 (2004-10-01), Krieger et al.
patent: 6869883 (2005-03-01), Chiang et al.
patent: 7196351 (2007-03-01), Chiang et al.
patent: 7286388 (2007-10-01), Chen et al.
patent: 2005/0112896 (2005-05-01), Hamann et al.
patent: 2006/0039192 (2006-02-01), Ha et al.
patent: 2007/0072125 (2007-03-01), Sousa et al.
patent: 2007/0153571 (2007-07-01), Elkins
patent: 2008/0042119 (2008-02-01), Sandoval et al.
patent: 2008/0224120 (2008-09-01), Czubatyj et al.
patent: 2009/0078924 (2009-03-01), Liang et al.
patent: 2009/0196094 (2009-08-01), Breitwisch et al.
J.H. Oh et al., “Full Integration of Highly Manufacturable 512Mb PRAM based on 90nm Technology”, IEEE, 1-4244-0439, Aug. 2006.
Kinan Kim et al., “Reliability Investigations for Manufacturable High Density PRAM”, IEEE 05CH37616 43rd Annual International Reliability Physics Symposium, San Jose, 2005, pp. 157-162.
S.J. Ahn et al., “Highly Reliable 50nm Contact Cell Technology for 256Mb PRAM”, 2005 Symposium on VLSI Technology Digest of Technical Papers.
Manzur Gill et al., “Ovonic Unified Memory—A High-performance Nonvolatile Memory Technology for Stand Alone Memory and Embedded Applications”.
Stefan Lai et al., “OUM—A 180 nm Nonvolatile Memory Cell Element Technology for Stand Alone and Embedded Applications”.
Andres Dieter
Happ Thomas
Majewski Petra
Ruf Bernhard
Edell Shapiro & Finnan LLC
Nguyen Dang T
Qimonda AG
LandOfFree
Method for fabricating an integrated circuit including... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for fabricating an integrated circuit including..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating an integrated circuit including... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2714110