Method for fabricating an integrated circuit including...

Static information storage and retrieval – Systems using particular element – Amorphous

Reexamination Certificate

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C365S148000, C365S151000

Reexamination Certificate

active

08009468

ABSTRACT:
A method for fabricating an integrated circuit, the method comprises forming a first electrode, depositing resistance changing material over the first electrode, the resistance changing material having an active zone for switching the resistance of the resistance changing material and an inactive zone, and forming a second electrode over the resistance changing material. The chemical composition of the resistance changing material in the active zone differs from the chemical composition of the resistance changing material in the inactive zone.

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