Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-01-04
2009-12-08
Doan, Theresa T (Department: 2814)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S200000, C438S202000, C257S355000
Reexamination Certificate
active
07629210
ABSTRACT:
To make electric current concentration and electric field concentration hardly take place in junction parts even in case of performing miniaturization and to achieve triggering at low voltage. An ESD protection apparatus is installed between an input terminal6of a semiconductor integrated circuit chip and a CMOS transistor100and includes a trigger element310comprising diodes311, 312which are broken down by overvoltage applied to the input terminal6and an ESD protection element210including longitudinal bipolar transistors211, 212for discharging the accumulated electric charge of the input terminal6by being electrically communicated owing to the breakdown of the diodes311, 312.
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Doan Theresa T
NEC Corporation
Young & Thompson
LandOfFree
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