Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1998-02-23
2000-02-15
Niebling, John F.
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438306, 438514, 438527, H01L 21336
Patent
active
060252391
ABSTRACT:
A method for fabricating an electrostatic discharge device is disclosed. The method forms successively a gate dielectric layer and a gate electrode over a semiconductor substrate. The gate electrode is then utilized as a mask for a first ion implantation for forming a first lightly-doped region in the substrate. Moreover, a second ion implantation step is carried out, using the gate electrode as a mask, to form a second lightly-doped region under the first lightly-doped region in the substrate. A sidewall spacer is then formed on sidewall of the gate electrode. Finally, using the sidewall spacer and the gate electrode as a mask, a third ion implantation step is carried out to form a heavily-doped region in the substrate.
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Lattin Christopher
Niebling John F.
Winbond Electronics Corp.
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