Semiconductor device manufacturing: process – Making device array and selectively interconnecting – Using structure alterable to nonconductive state
Reexamination Certificate
2006-01-31
2006-01-31
Zarabian, Amir (Department: 2822)
Semiconductor device manufacturing: process
Making device array and selectively interconnecting
Using structure alterable to nonconductive state
C438S215000, C438S281000, C438S333000, C257S529000
Reexamination Certificate
active
06991971
ABSTRACT:
A method for fabricating a fuse for a semiconductor device. The method including: providing a substrate; forming a first dielectric layer on a top surface of said substrate; forming a dielectric mandrel on a top surface of said first dielectric layer; forming a second dielectric layer on top of said mandrel and a top surface of said first dielectric layer forming contact openings down to said substrate in said first and second dielectric layers on opposite sides of said mandrel, said contacts spaced away from said mandrel and leaving portions of said second dielectric layer between said mandrel and said contacts; removing said second dielectric layer from over said mandrel between said contact openings to form a trough; and filling said trough and contact openings with a conductor.
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IBM Technical Disclosure Bulletin, vol. 32, No. 3A, Aug. 1989, Fuse Structure for Wide Fuse Materials Choice, pp. 438-439.
IBM Technical Disclosure Bulletin, vol. 32, No. 8A, Jan. 1990, Method to Incorporate Three Sets of Pattern Information in Two Photomasking Steps, pp. 218-219.
Daubenspeck Timothy H.
McDevitt Thomas L.
Motsiff William T.
Stamper Anthony K.
Duong Khanh
Sabo William
Schmeiser Olsen & Watts
Zarabian Amir
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