Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-07-03
2007-07-03
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S301000, C257SE21655
Reexamination Certificate
active
10748241
ABSTRACT:
A method for fabricating a semiconductor transistor including forming a first insulating layer on a semiconductor substrate; forming an LDD region using ion implantation; patterning the first insulating layer; forming a trench in the substrate; forming a trench gate by depositing and planarizing a second insulating layer and a conductor on the substrate with the trench formed therein; forming a photoresist pattern on the substrate; forming source/drain regions by performing an ion implantation using the photoresist pattern as a mask; and removing the photoresist pattern and the first insulating layer.Thus, a method for fabricating a semiconductor transistor according to the present invention can reduce source/drain resistances and gate resistance by forming a trench type gate and can efficiently control a short channel effect.
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Stanley Wolf and Richard N. Tauber, Silicon Processing For The VLSI Era, 1986, Lattice Press, vol. 1, pp. 551-555.
Dongbu Electronics Co. Ltd.
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Isaac Stanetta
Lebentritt Michael
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