Method for fabricating a trench structure which is...

Details Method for fabricating a trench structure which is... Method for fabricating a trench structure which is...

2007-03-13

2007-03-13

Nguyen, Tuan H. (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S386000

Reexamination Certificate

active

10886053

ABSTRACT:
A method for fabricating a trench structure, in particular a trench capacitor with an insulation collar, which is electrically connected to a substrate on one side via a buried contact. Fabrication includes, for example, providing a trench in the substrate using a hard mask with a corresponding mask opening; providing an at least partial trench filling; providing a liner on the resulting structure; carrying out an oblique implantation of impurity ions onto the liner for altering the etching properties of an implanted partial region of the liner; selectively removing the implanted partial region of the liner by a first etching for forming a liner mask from the complimentary partial region of the liner, which partially masks the top side of the trench filling; removing a part of the trench filling by a second etching using the liner mask; and replacing the removed part of the trench filling.

REFERENCES:
patent: 4157269 (1979-06-01), Ning et al.
patent: 6426253 (2002-07-01), Tews et al.
patent: 6498061 (2002-12-01), Divakaruni et al.
patent: 6936512 (2005-08-01), Chudzik et al.
patent: 2005/0191564 (2005-09-01), Huang et al.

Affiliated with

Also associated with

Rating

Method for fabricating a trench structure which is... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating a trench structure which is..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating a trench structure which is... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3743884