Method for fabricating a trench structure

Details Method for fabricating a trench structure Method for fabricating a trench structure

2005-03-01

2005-03-01

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S249000

Reexamination Certificate

active

06861312

ABSTRACT:
An insulation region, for example, an oxide collar, is formed in a trench structure for a DRAM by first widening a first trench region of the trench that is to be formed, in particular, a base region thereof. At least part of the widened region is then provided with a material region for the insulation region.

REFERENCES:
patent: 6150210 (2000-11-01), Arnold
patent: 6190988 (2001-02-01), Furukawa et al.
patent: 6541817 (2003-04-01), Hurkz et al.
patent: 6599798 (2003-07-01), Tews et al.
patent: 100 29 036 (2001-08-01), None
patent: 100 30 696 (2002-01-01), None

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