Method for fabricating a trench having a buried dielectric...

Details Method for fabricating a trench having a buried dielectric... Method for fabricating a trench having a buried dielectric...

2005-08-23

2005-08-23

Tsai, H. Jey (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S248000, C438S391000

Reexamination Certificate

active

06933192

ABSTRACT:
A method of forming a buried dielectric collar around a trench and of forming a trench capacitor, the buried dielectric collar formed by: (a) forming the trench in a substrate; (b) forming a multilayer coating on sidewalls and a bottom of the trench; (c) removing a continuous band of the multilayer coating from the sidewalls a fixed distance from a top of the trench to expose a continuous band substrate in the sidewalls of the trench; (d) etching, in said exposed band of substrate, a lateral trench extending into said substrate in said sidewalls of said trench; and (e) filling the lateral trench with a dielectric material to form the buried dielectric collar. The trench capacitor is formed by filling the trench or its variants with polysilicon.

REFERENCES:
patent: 6373086 (2002-04-01), Mandelman et al.
patent: 6599798 (2003-07-01), Tews et al.

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