Method for fabricating a trench capacitor with an insulation...

Details Method for fabricating a trench capacitor with an insulation... Method for fabricating a trench capacitor with an insulation...

2007-03-27

2007-03-27

Dang, Trung (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S301000, C257S304000, C257SE27093, C257SE21653

Reexamination Certificate

active

11205323

ABSTRACT:
The present invention provides a method for fabricating a trench capacitor with an insulation collar in a substrate, which is electrically connected to the substrate on one side via a buried contact, in particular for a semiconductor memory cell with a planar selection transistor that is provided in the substrate and connected via the buried contact The invention likewise provides a corresponding trench capacitor.

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patent: 102 55 847 (2004-07-01), None

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