Method for fabricating a trench capacitor

Details Method for fabricating a trench capacitor Method for fabricating a trench capacitor

2005-11-01

2005-11-01

Chen, Jack (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S246000, C438S387000

Reexamination Certificate

active

06960503

ABSTRACT:
A method for making a deep trench capacitor is disclosed. A substrate with a deep trench formed therein is provided. The trench is doped to form a buried plate electrode serving as a first electrode of the deep trench capacitor at a lower portion of the trench. A node dielectric is formed on interior surface of the trench. Subsequently, the trench is filled with a first conductive layer and then recessed to a first depth. A collar oxide layer is then formed on vertical sidewall of the trench on the first conductive layer. The trench is filled with a second conductive layer and again recessed to a second depth. A pair of symmetric spacers is then formed on the vertical sidewall of the trench. A third conductive layer is deposited on the second conductive layer and on the symmetric spacers, and fills the trench. The trench is recessed to a third depth.

REFERENCES:
patent: 6365485 (2002-04-01), Shiao et al.
patent: 6680237 (2004-01-01), Chen et al.
patent: 6815307 (2004-11-01), Hsu et al.
patent: 488067 (2002-05-01), None
patent: 508758 (2002-11-01), None

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