Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1996-11-18
1998-06-02
Chaudhari, Chandra
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438666, H01L 218242
Patent
active
057598908
ABSTRACT:
A method of fabricating a storage electrode of a storage capacitor of a semiconductor memory device, that includes a substrate, and a transfer transistor formed on the substrate. A first conductive layer is formed connected to the source/drain region. A first insulating layer is then formed over the first conductive layer. A first film is on a portion of the first insulating layer and a second film on the first film, wherein the first film and the second film form a stacked layer, the stacked layer having a sidewall. A second insulating layer is formed on the sidewall of the stacked layer. A third insulating layer is then over the substrate. The second insulating layer and a portion of the first insulating layer therebeneath are removed to form a first opening in the first insulating layer without exposing the first conductive layer. The fourth insulating layer is then removed and a second conductive layer is formed over the substrate and so as to substantially fill the first opening. The stacked layer and a portion of the second conductive layer thereon are then removed. A second opening is formed in the first and second conductive layers to expose a portion of the first insulating layer; and a third conductive layer is formed at a periphery of the opening, in connection with the peripheral edges of the first and second conductive layers, wherein the storage electrode includes the first, second and third conductive layers.
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Chaudhari Chandra
United Microelectronics Corporation
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