Method for fabricating a transistor with reliable source doping

Details Method for fabricating a transistor with reliable source doping Method for fabricating a transistor with reliable source doping

2011-07-12

2011-07-12

Pham, Thanh V (Department: 2894)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S232000, C438S289000, C257S335000, C257SE21435

Reexamination Certificate

active

07977197

ABSTRACT:
A transistor and a method for the fabrication of transistors with different gate oxide thicknesses is proposed, in which for the doping of the source, the typical LDD implantation, which is formed after the fabrication of the gate electrode, is replaced by a doping step, which is generated before applying the gate stack. In this way that is already a component of the remaining process sequence in the fabrication of the transistor doping can be used.

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