Method for fabricating a transistor with increased hot carrier r

Details Method for fabricating a transistor with increased hot carrier r Method for fabricating a transistor with increased hot carrier r

1996-11-20

1998-10-27

Niebling, John

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438775, H01L 21336, H01L 2131

Patent

active

058277692

ABSTRACT:
A method of fabricating a field effect transistor with increased resistance to hot carrier damage is disclosed. An oxide is grown on the gate electrode. This oxide is strengthened by nitridation and anneal. After a lightly doped drain implant, a second side oxide and a conformal nitride layer are deposited. Then, the conformal nitride is anisotropically etched to form spacers for masking a high dose drain implant. An NMOS transitor fabricated with this process has been found to be forty percent less susceptible to hot carrier damage than a conventional lightly doped drain process. Also, this process has proven to be more manufacturable than one in which the side oxide is nitrided and re-oxidized.

REFERENCES:
patent: 5403786 (1995-04-01), Hori
patent: 5436481 (1995-07-01), Egawa
patent: 5521127 (1996-05-01), Hori
patent: 5620910 (1997-04-01), Teramoto
patent: 5637528 (1997-06-01), Higashitani et al.
patent: 5668036 (1997-09-01), Sune
Wolf, Stanley "Silicon Processing For the VLSI Era Volume 1: Process Technology", Lattice Press, pp. 198-201, 207-219, 1986.
"Hot-Carrier-Resistant Structure by Re-Oxidized Nitrided Oxide Sidewall for Highly Reliable and High Performance LLD Mosfets," IEDM 91, 1991, LSI Laboratory, Mitsubishi Electric Corp.

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