Method for fabricating a three-dimensional capacitor

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S312000, C257S528000, C257S532000, C257SE21010, C257SE27048, C438S238000, C438S239000, C438S240000, C438S393000, C438S396000

Reexamination Certificate

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07732851

ABSTRACT:
A capacitor and a method of fabricating the capacitor are provided herein. The capacitor can be formed by forming two or more dielectric layers and a lower electrode, wherein at least one of the two or more dielectric layers is formed before the lower electrode is formed.

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Chinese Office Action dated Mar. 21, 2008 (with English translation).
Kukli et al., “Development of Dielectric Properties of Niobium Oxide, Tantalum Oxide, and Aluminum Oxide Based Nanolayered Materials,” Journal of the Electrochemical Society, Jan. 1, 2001, pp. F35-41, vol. 148, No. 2, Electrochemical Society, Manchester, New Hampshire, U.S.
European Search Report from corresponding European Application No. 05255060 mailed on Jul. 15, 2008.

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