Method for fabricating a three-dimensional capacitor

Details Method for fabricating a three-dimensional capacitor Method for fabricating a three-dimensional capacitor

2005-08-22

2010-06-08

Warren, Matthew E (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S312000, C257S528000, C257S532000, C257SE21010, C257SE27048, C438S238000, C438S239000, C438S240000, C438S393000, C438S396000

Reexamination Certificate

active

07732851

ABSTRACT:
A capacitor and a method of fabricating the capacitor are provided herein. The capacitor can be formed by forming two or more dielectric layers and a lower electrode, wherein at least one of the two or more dielectric layers is formed before the lower electrode is formed.

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European Search Report from corresponding European Application No. 05255060 mailed on Jul. 15, 2008.

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