Method for fabricating a silicon-on-sapphire wafer

Details Method for fabricating a silicon-on-sapphire wafer Method for fabricating a silicon-on-sapphire wafer

1994-04-07

1999-03-02

Fourson, George

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Multiple layers

438 16, 438 18, 438659, 438479, 438517, 438532, H01L 2176

Patent

active

058770941

ABSTRACT:
A method for fabricating a silicon-on-sapphire wafer for processing by silicon-wafer-processing equipment. A layer is deposited on a backside of a silicon-on-sapphire wafer, the layer having optical and electrical properties of silicon, wherein the silicon-on-sapphire wafer may be sensed by a sensor designed to sense a presence of a silicon wafer.

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G.F. Guhman, "Diode-Capacitor Memory Supported on a Sapphire Substrate", IBM Technical Disclosure Bulletin, vol. 16, No. 10, Mar. 1974, pp. 3166-3167.
H.L. Kalter, "Capacitor-Diode Memory Cell Process", IBM Technical Disclosure Bulletin, vol. 16, No. 10, Mar. 1974, pp. 3168-3169.

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